FFSH20120ADN-F155, Diode Schottky 1.2KV 20A 3-Pin(3+Tab) TO-247 Tube
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см. техническую документацию
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Описание
Semiconductor - Discrete > Diodes > Rectifier
FFSH SiC Schottky Diodesonsemi FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of +175°C. These onsemi Schottky Diodes have no switching loss and a high surge current capacity. FFSH diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
Технические параметры
Brand: | onsemi/Fairchild |
Configuration: | Dual Anode Common Cathode |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
If - Forward Current: | 20 A |
Ifsm - Forward Surge Current: | 96 A |
Ir - Reverse Current: | 200 uA |
Manufacturer: | onsemi |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247-3 |
Packaging: | Tube |
Part # Aliases: | FFSH20120ADN_F155 |
Pd - Power Dissipation: | 150 W |
Product Category: | Schottky Diodes & Rectifiers |
Product Type: | Schottky Diodes & Rectifiers |
Product: | Schottky Silicon Carbide Diodes |
Series: | FFSH20120A |
Subcategory: | Diodes & Rectifiers |
Technology: | SiC |
Termination Style: | Through Hole |
Type: | Silicon Carbide Schottky Diode |
Vf - Forward Voltage: | 1.45 V |
Vr - Reverse Voltage: | 1.2 kV |
Vrrm - Repetitive Reverse Voltage: | 1.2 kV |
Вес, г | 1 |
Техническая документация
Datasheet
pdf, 305 КБ
Дополнительная информация
Калькуляторы группы «Диоды выпрямительные»
Типы корпусов импортных диодов