Транзистор N-MOSFET, полевой, 60В, 4А, 3Вт, SOT223

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75 руб.

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Номенклатурный номер: 8020285797

Артикул: NDT3055L

Описание Транзистор N-MOSFET, полевой, 60В, 4А, 3Вт, SOT223

Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	7 ns
Forward Transconductance - Min:	7 S
Id - Continuous Drain Current:	4 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-65 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-223-4
Part # Aliases:	NDT3055L_NL
Pd - Power Dissipation:	3 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	20 nC
Rds On - Drain-Source Resistance:	70 mOhms
Rise Time:	7.5 ns
Series:	NDT3055L
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	5 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Resistance	100 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	3 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-65 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	13 nC @ 10 V
Width	3.56mm
Вес, г	10