DMN3067LW-7, Транзистор: N-MOSFET, полевой, 30В, 2,1А, Idm: 10А, 0,5Вт, SOT323

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48 руб.

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Добавить в корзину 5 шт. на сумму 240 руб.

Номенклатурный номер: 8020557682

Артикул: DMN3067LW-7

Бренд: DIODES INC.

Описание Транзистор: N-MOSFET, полевой, 30В, 2,1А, Idm: 10А, 0,5Вт, SOT323 Характеристики

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.2V
Maximum Continuous Drain Current	2.6 A
Maximum Drain Source Resistance	98 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-12 V, +12 V
Maximum Gate Threshold Voltage	1.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.1 W
Minimum Gate Threshold Voltage	0.5V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-323
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	4.6 nC @ 4.5 V
Width	1.35mm
Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	6.1 ns
Id - Continuous Drain Current:	2.6 A
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-323-3
Pd - Power Dissipation:	1.1 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	4.6 nC
Rds On - Drain-Source Resistance:	67 mOhms
Rise Time:	5.2 ns
Series:	DMN3067
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	3.8 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-12 V, +12 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Вес, г	0.121