BGSX22G5A10E6327XTSA1, QFN-10 RF SwItches
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Описание
BGSX22G5A10 DPDT Antenna Cross Switch
Infineon Technologies BGSX22G5A10 DPDT Antenna Cross Switch is designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon"s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS, including the inherent higher ESD robustness. The device has a very small size of only 1.1x1.5mm 2 and a maximum thickness of 0.55mm.
Infineon Technologies BGSX22G5A10 DPDT Antenna Cross Switch is designed for LTE and WCDMA triple antenna applications. This DPDT offers low insertion loss and low harmonic generation paired with high isolation between RF ports. The switch is controlled via a GPIO interface. The on-chip controller allows power-supply voltages from 1.65V to 3.4V. The switch features direct-connect-to-battery functionality and DC-free RF ports. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G5A10 RF Switch is manufactured in Infineon"s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS, including the inherent higher ESD robustness. The device has a very small size of only 1.1x1.5mm 2 and a maximum thickness of 0.55mm.
Технические параметры
Количество Выводов | 10вывод(-ов) |
Максимальная Рабочая Температура | 85°C |
Максимальная Частота | 6ГГц |
Максимальное Напряжение Питания | 3.4В |
Минимальная Рабочая Температура | -40°C |
Минимальная Частота | 100МГц |
Минимальное Напряжение Питания | 1.65В |
Стиль Корпуса Радиочастотной Микросхемы | ATSLP |
Brand: | Infineon Technologies |
Factory Pack Quantity: Factory Pack Quantity: | 4500 |
Insertion Loss: | 1.1 dB |
Manufacturer: | Infineon |
Maximum Frequency: | 6 GHz |
Maximum Operating Temperature: | +85 C |
Minimum Frequency: | 100 MHz |
Minimum Operating Temperature: | -40 C |
Mounting Style: | SMD/SMT |
Number of Switches: | Dual |
Off Isolation - Typ: | 31 dB |
Operating Supply Current: | 55 uA |
Package / Case: | ATSLP-10 |
Part # Aliases: | BGSX 22G5A10 E6327 SP001777960 |
Product Category: | RF Switch ICs |
Product Type: | RF Switch ICs |
Subcategory: | Wireless & RF Integrated Circuits |
Supply Voltage - Max: | 3.4 V |
Supply Voltage - Min: | 1.65 V |
Switch Configuration: | DPDT |
Technology: | Si |
Mounting Type | Surface Mount |
Package Type | ATSLP-10-50 |
Pin Count | 10 |
Вес, г | 0.02 |
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