RGW00TS65DHRC11, IGBT Transistors High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive.
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см. техническую документацию
см. техническую документацию
450 шт., срок 6-8 недель
2 220 руб.
от 10 шт. —
1 810 руб.
от 25 шт. —
1 510 руб.
от 250 шт. —
1 153.87 руб.
Добавить в корзину 1 шт.
на сумму 2 220 руб.
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
RGW 650V Field Stop Trench IGBTsROHM Semiconductor RGW 650V Field Stop Trench IGBTs offer a low collector-emitter saturation voltage in a small package. The RGW IGBTs feature high-speed switching, low switching loss, and built-in very fast and soft recovery FRD. The ROHM RGW 650V Field Stop Trench IGBTs are ideal for solar inverter, UPS, welding, IH, and PFC applications.
Технические параметры
| Brand: | ROHM Semiconductor |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.9 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 96 A |
| Continuous Collector Current Ic Max: | 200 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | 200 nA |
| Manufacturer: | ROHM Semiconductor |
| Maximum Gate Emitter Voltage: | -30 V, 30 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247N-3 |
| Packaging: | Tube |
| Part # Aliases: | RGW00TS65DHR |
| Pd - Power Dissipation: | 254 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Channel Type | N |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 50 A |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Power Dissipation | 254 W |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | TO-247N |
| Pin Count | 3 |
| Transistor Configuration | Common Emitter |
| Вес, г | 1 |
Техническая документация
Datasheet RGW00TS65DHRC11
pdf, 5792 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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