Категория	Транзистор
Тип	полевой
Вид	MOSFET

Continuous Drain Current (Id)	-
Drain Source On Resistance (RDS(on)@Vgs,Id)	-
Drain Source Voltage (Vdss)	-
Gate Threshold Voltage (Vgs(th)@Id)	-
Input Capacitance (Ciss@Vds)	-
Power Dissipation (Pd)	-
Reverse Transfer Capacitance (Crss@Vds)	-
Total Gate Charge (Qg@Vgs)	-
Type	-
Channel Mode	Enhancement
Channel Type	P
Maximum Continuous Drain Current	8.4 A
Maximum Drain Source Resistance	42 mΩ
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	69 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Series	PowerTrench
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	19 nC @ 5 V
Width	6.22mm
Lead Finish	Matte Tin
Max Processing Temp	260
Mounting	Surface Mount
Operating Temperature	-55 to 150 °C
RDS-on	27@10V mOhm
Typical Fall Time	14 ns
Typical Rise Time	15 ns
Typical Turn-Off Delay Time	34 ns
Typical Turn-On Delay Time	8 ns
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	14 ns
Id - Continuous Drain Current:	32 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	DPAK-3
Pd - Power Dissipation:	69 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	27 nC
Rds On - Drain-Source Resistance:	27 mOhms
Rise Time:	15 ns
Series:	FDD4685
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	34 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.5

FDD4685, Транзистор: P-MOSFET, полевой, -40В, -32А, 69Вт, TO252

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