BSZ058N03LSGATMA1, Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 15 |
| Maximum Drain Source Resistance (mOhm) | 5.8 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2100 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | OptiMOS |
| Product Category | Power MOSFET |
| Standard Package Name | SON |
| Supplier Package | TSDSON EP |
| Typical Fall Time (ns) | 3.2 |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Gate Charge @ Vgs (nC) | 11 4.5V|22 10V |
| Typical Input Capacitance @ Vds (pF) | 1800 15V |
| Typical Rise Time (ns) | 3.6 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Turn-On Delay Time (ns) | 4.6 |
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 3.2 ns |
| Forward Transconductance - Min: | 36 S |
| Id - Continuous Drain Current: | 40 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TSDSON-8 |
| Part # Aliases: | BSZ058N03LS G SP000307424 |
| Pd - Power Dissipation: | 45 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 7.1 mOhms |
| Rise Time: | 3.6 ns |
| Series: | OptiMOS 3 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 19 ns |
| Typical Turn-On Delay Time: | 4.6 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.2 V |
