IPD50R650CEAUMA1, Trans MOSFET N-CH 500V 9A 3-Pin(2+Tab) DPAK T/R
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91 руб.
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87 руб.
Добавить в корзину 2500 шт.
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
CoolMOS™ Power TransistorsInfineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high-class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 13 ns |
| Id - Continuous Drain Current: | 9 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Part # Aliases: | IPD50R650CE SP001396796 |
| Pd - Power Dissipation: | 69 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 15 nC |
| Rds On - Drain-Source Resistance: | 1.54 Ohms |
| Rise Time: | 5 ns |
| Series: | CoolMOS CE |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | CoolMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 27 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Maximum Continuous Drain Current - (A) | 6.1 |
| Maximum Drain Source Resistance - (mOhm) | 650@13V |
| Maximum Drain Source Voltage - (V) | 500 |
| Maximum Gate Source Voltage - (V) | 20 |
| Maximum Gate Threshold Voltage - (V) | 3.5 |
| Maximum Power Dissipation - (mW) | 47000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Typical Gate Charge @ 10V - (nC) | 15 |
| Typical Gate Charge @ Vgs - (nC) | 15@10V |
| Typical Input Capacitance @ Vds - (pF) | 342@100V |
Техническая документация
Datasheet
pdf, 1152 КБ
Datasheet IPD50R650CEAUMA1
pdf, 1218 КБ
ПАРАМЕТРЫ ОТЕЧЕСТВЕННЫХ СТАБИЛИТРОНОВ
pdf, 354 КБ
Цветовая маркировка стабилитронов и стабисторов
pdf, 389 КБ
Дополнительная информация
Калькуляторы группы «Стабилитроны»
Типы корпусов импортных диодов
