IRFR1N60ATRPBF, Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R
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Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 1.4 |
| Maximum Drain Source Resistance (mOhm) | 7000 10V |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 36000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 20 |
| Typical Gate Charge @ 10V (nC) | 14(Max) |
| Typical Gate Charge @ Vgs (nC) | 14(Max)10V |
| Typical Input Capacitance @ Vds (pF) | 229 25V |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 18 |
| Typical Turn-On Delay Time (ns) | 9.8 |
Техническая документация
Datasheet
pdf, 272 КБ
