DI105N04PQ-AQ, MOSFET MOSFET, PowerQFN 5x6, 40V, 105A, 150C, N, AEC-Q101
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
4489 шт., срок 7-9 недель
470 руб.
от 10 шт. —
340 руб.
от 100 шт. —
194 руб.
от 500 шт. —
179.37 руб.
Добавить в корзину 1 шт.
на сумму 470 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Advanced Trench Technology Power MOSFETsDiotec Semiconductors Advanced Trench Technology Power MOSFETs are a comprehensive range of MOSFET types, from traditional THT cases via standard SMD packages to the most recent "leadless" QFN and TOLL outlines. Components are available in standard commercial/industrial grading and fully AEC-Q101 qualified options, marked by the suffix -AQ. The MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. Current ratings range from 100mA to 280A, while voltage ranges from 20V to 250V.
Технические параметры
| Brand: | Diotec Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 9.4 ns |
| Forward Transconductance - Min: | 116 S |
| Id - Continuous Drain Current: | 105 A |
| Manufacturer: | Diotec Semiconductor |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | QFN-8 |
| Packaging: | Reel, Cut Tape |
| Part # Aliases: | N-CHANNEL |
| Pd - Power Dissipation: | 83 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 23 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 2.6 mOhms |
| Rise Time: | 8.3 ns |
| Series: | DI100N |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 28 ns |
| Typical Turn-On Delay Time: | 12 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 611 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
