DI4A7P06SQ2, MOSFET MOSFET, SO-8, -60V, -4.7A, 150C, P
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Advanced Trench Technology Power MOSFETsDiotec Semiconductors Advanced Trench Technology Power MOSFETs are a comprehensive range of MOSFET types, from traditional THT cases via standard SMD packages to the most recent "leadless" QFN and TOLL outlines. Components are available in standard commercial/industrial grading and fully AEC-Q101 qualified options, marked by the suffix -AQ. The MOSFETs are offered as N, P, or dual N+P channel types in single, dual, and H bridge configurations. Current ratings range from 100mA to 280A, while voltage ranges from 20V to 250V.
Технические параметры
| Brand: | Diotec Semiconductor |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Fall Time: | 13 ns |
| Id - Continuous Drain Current: | 4.7 A |
| Manufacturer: | Diotec Semiconductor |
| Maximum Operating Temperature: | +155 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SO-8 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 3 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 8.5 nC |
| Rds On - Drain-Source Resistance: | 75 mOhms |
| Rise Time: | 6 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 40 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Вес, г | 400 |
Техническая документация
Datasheet
pdf, 656 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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