CAB016M12FM3T, Discrete Semiconductor Modules SiC, Module, 16mohm, 1200V, 33.8 mm, FM3, Half-Bridge, Industrial, Gen 3, Pre-Applied TIM
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Описание
Semiconductors\Discrete Semiconductors\Discrete Semiconductor Modules
WolfPACK™ SiC-Based Power ModulesWolfspeed WolfPACK™ SiC-Based Power Modules are simple and designed to provide clean, reliable power for energy conversion systems. These modules offer incredibly low losses in a package that lends itself extremely well to automation and manufacturing at scale. These Wolfspeed WolfPACK modules come in SiC MOSFET half-bridge and SiC MOSFET six-pack configurations with a variety of mΩ options. The devices feature a compact footprint and can be used to design a streamlined, higher power density system. They can help system designers enable a more compact solution than achievable with either multiple discrete devices or with larger, high-ampacity modules.
Технические параметры
Brand: | Wolfspeed |
Configuration: | Dual |
Factory Pack Quantity: Factory Pack Quantity: | 54 |
Id - Continuous Drain Current: | 78 A |
Manufacturer: | Wolfspeed |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -40 C |
Mounting Style: | Chassis Mount |
Package / Case: | 48 mm x 33.5 mm |
Packaging: | Tray |
Product Category: | Discrete Semiconductor Modules |
Product Type: | Discrete Semiconductor Modules |
Product: | Power MOSFET Modules |
Rds On - Drain-Source Resistance: | 16 mOhms |
Series: | WolfPACK |
Subcategory: | Discrete Semiconductor Modules |
Technology: | SiC |
Transistor Polarity: | N-Channel |
Type: | Half Bridge Module |
Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
Vgs - Gate-Source Voltage: | -4 V, 15 V |
Vgs th - Gate-Source Threshold Voltage: | 3.6 V |
Техническая документация
Datasheet
pdf, 2082 КБ
Дополнительная информация
Калькуляторы группы «Стабилизаторы напряжения и тока»
Типы корпусов импортных микросхем
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