BSS84DW-7-F, Транзистор: P-MOSFET x2, полевой, -50В, -0,13А, 0,3Вт, SOT363

Фото 1/3 BSS84DW-7-F, Транзистор: P-MOSFET x2, полевой, -50В, -0,13А, 0,3Вт, SOT363
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Номенклатурный номер: 8021863759
Артикул: BSS84DW-7-F
Бренд: DIODES INC.

Описание

Диоды
Описание Транзистор: P-MOSFET x2, полевой, -50В, -0,13А, 0,3Вт, SOT363 Характеристики
Категория Диод

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
Product Category Small Signal
Configuration Dual
Channel Mode Enhancement
Channel Type P
Number of Elements per Chip 2
Maximum Drain Source Voltage (V) 50
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 0.13
Maximum Drain Source Resistance (mOhm) 10000@5V
Typical Input Capacitance @ Vds (pF) 45(Max)@25V
Maximum Power Dissipation (mW) 300
Typical Turn-Off Delay Time (ns) 18
Typical Turn-On Delay Time (ns) 10
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Temperature Grade Commercial
Packaging Tape and Reel
Automotive Yes
AEC Qualified Number AEC-Q101
Pin Count 6
Standard Package Name SOT
Supplier Package SOT-363
Military No
Mounting Surface Mount
Package Height 1
Package Length 2.15
Package Width 1.3
PCB changed 6
Lead Shape Gull-wing
Brand: Diodes Incorporated
Channel Mode: Enhancement
Configuration: Dual
Factory Pack Quantity: Factory Pack Quantity: 3000
Forward Transconductance - Min: 0.05 S
Id - Continuous Drain Current: 130 mA
Manufacturer: Diodes Incorporated
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Package / Case: SOT-363-6
Pd - Power Dissipation: 300 mW
Product Category: MOSFET
Product Type: MOSFET
Product: MOSFET Small Signal
Rds On - Drain-Source Resistance: 10 Ohms
Series: BSS84
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: P-Channel
Transistor Type: 2 P-Channel
Type: Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time: 18 ns
Typical Turn-On Delay Time: 10 ns
Vds - Drain-Source Breakdown Voltage: 50 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 800 mV
Вес, г 0.01

Техническая документация

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