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SI3458BDV-T1-GE3, Транзистор: N-MOSFET; TrenchFET®; полевой; 60В; 3,2А; Idm: 10А

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270 руб.

от 5 шт. — 150 руб.

от 25 шт. — 123 руб.

от 100 шт. — 93.91 руб.

Добавить в корзину 1 шт. на сумму 270 руб.

Номенклатурный номер: 8021948546

Артикул: SI3458BDV-T1-GE3

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Si3 TrenchFET® Power MOSFETs Vishay / Siliconix Si3 TrenchFET® Power MOSFETs are available in N-channel, P-channel, and N- and P-channel versions. These Si3 MOSFETs are also offered in different VGS and VDS ranges. Vishay / Siliconix Si3 TrenchFET Power MOSFETs operate in an enhancement mode and offer ultra-low RDS(ON) for high efficiency. The series incorporates Si technology and operates at a temperature range of -55°C to 150°C. Typical applications include load switches and DC to DC converters.

Технические параметры

Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Factory Pack Quantity:	3000
Fall Time:	10 ns
Id - Continuous Drain Current:	4.1 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	TSOP-6
Part # Aliases:	SI3458BDV-T1-BE3 SI3458BDV-GE3
Pd - Power Dissipation:	3.3 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	3.5 nC
Rds On - Drain-Source Resistance:	100 mOhms
Rise Time:	17 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	16 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.03