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CSD18504KCS

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210 руб.

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от 10 шт. — 170 руб.

от 30 шт. — 143 руб.

от 100 шт. — 119.36 руб.

Добавить в корзину 2 шт. на сумму 420 руб.

Номенклатурный номер: 8022768098

Бренд: Texas Instruments

Описание

Описание Транзистор: N-MOSFET, полевой, 40В, 100А, 115Вт, TO220-3 Характеристики

Категория	Транзистор
Тип	полевой
Вид	MOSFET

Технические параметры

Case	TO220-3
Drain current	100A
Drain-source voltage	40V
Gate charge	19nC
Gate-source voltage	±20V
Heatsink thickness	1.14…1.4mm
Kind of channel	enhanced
Kind of package	tube
Manufacturer	TEXAS INSTRUMENTS
Mounting	THT
On-state resistance	5.5mΩ
Polarisation	unipolar
Power dissipation	115W
Technology	NexFET™
Type of transistor	N-MOSFET
Continuous Drain Current (Id)	53A;100A
Drain Source On Resistance (RDS(on)@Vgs,Id)	7mΩ@40A, 10V
Drain Source Voltage (Vdss)	40V
Gate Threshold Voltage (Vgs(th)@Id)	2.3V@250uA
Input Capacitance (Ciss@Vds)	1.8nF@20V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	115W
Total Gate Charge (Qg@Vgs)	25nC@10V
Type	null
Brand:	Texas Instruments
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	4.2 ns
Forward Transconductance - Min:	72 S
Id - Continuous Drain Current:	100 A
Manufacturer:	Texas Instruments
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	93 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19 nC
Rds On - Drain-Source Resistance:	8 mOhms
REACH - SVHC:	Details
Rise Time:	5.2 ns
Series:	CSD18504KCS
Subcategory:	MOSFETs
Technology:	Si
Tradename:	NexFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	11.2 ns
Typical Turn-On Delay Time:	4.4 ns
Vds - Drain-Source Breakdown Voltage:	40 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V