SSM3J351R,LF

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6740 шт., срок 7-9 недель

47 руб.

Мин. кол-во для заказа 10 шт.

Кратность заказа 5 шт.

Добавить в корзину 10 шт. на сумму 470 руб.

Альтернативные предложения3

Номенклатурный номер: 8022847112

Бренд: Toshiba

60V 3.5A 2W 134mOhm@10V,1A 2V@1mA P Channel SOT-23F MOSFETs

Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	3000
Id - Continuous Drain Current:	3.5 A
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	SOT-23F-3
Pd - Power Dissipation:	2 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	15.1 nC
Qualification:	AEC-Q101
Rds On - Drain-Source Resistance:	164 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	32 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	800 mV
Current - Continuous Drain (Id) @ 25В°C	3.5A(Ta)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Operating Temperature	150В°C
Package / Case	SOT-23-3 Flat Leads
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	2W(Ta)
Rds On (Max) @ Id, Vgs	134mOhm @ 1A, 10V
Series	U-MOSVI
Supplier Device Package	SOT-23F
Technology	MOSFET(Metal Oxide)
Vgs (Max)	+10V, -20V
Vgs(th) (Max) @ Id	2V @ 1mA