DMC3401LDW-7, Dual N/P-Channel-Channel MOSFET, 550 mA, 800 mA, 30 V, 6-Pin SOT-363 Diodes Inc DMC3401LDW-7
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
130 руб.
Кратность заказа 50 шт.
от 250 шт. —
96 руб.
Добавить в корзину 50 шт.
на сумму 6 500 руб.
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The DiodesZetex 30V complementary pair enhancement mode MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance, making it ideal for high-efficiency power management application.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Maximum Continuous Drain Current | 550 mA, 800 mA |
| Maximum Drain Source Resistance | 0.7 Ω |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Threshold Voltage | 1.6V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 2 |
| Package Type | SOT-363 |
| Pin Count | 6 |
| Series | DMC3401 |
| Transistor Material | Si |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 13.8 ns, 237 ns |
| Id - Continuous Drain Current: | 800 mA, 550 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOT-363-6 |
| Pd - Power Dissipation: | 400 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 1.2 nC, 800 pC |
| Rds On - Drain-Source Resistance: | 700 mOhms, 1.7 Ohms |
| Rise Time: | 3.3 ns, 2.3 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel, P-Channel |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Typical Turn-Off Delay Time: | 16.8 ns, 406 ns |
| Typical Turn-On Delay Time: | 3.5 ns, 3.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV, 1 V |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
