AFT09MS007NT1, РЧ полевой транзистор, 30 В DC, 114 Вт, 136 МГц, 941 МГц, PLD-1.5W
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Описание
TRANSISTOR, RF, 30V, PLD-1.5W-2; Drain Source Voltage Vds:30VDC; Continuous Drain Current Id:-; Power Dissipation Pd:114W; Operating Frequency Min:136MHz; Operating Frequency Max:941MHz; RF Transistor Case:PLD-1.5W; No. of Pins:2Pins; Operating Temperature Max:150°C; Product Range:-; MSL:MSL 3 - 168 hours; SVHC:No SVHC (15-Jan-2019)
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Maximum Drain Source Voltage (V) | 30 |
Maximum Frequency (MHz) | 941 |
Maximum Gate Source Leakage Current (nA) | 1 |
Maximum Gate Source Voltage (V) | 12 |
Maximum Gate Threshold Voltage (V) | 2.6 |
Maximum IDSS (uA) | 10 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 182000 |
Maximum VSWR | 65 |
Minimum Frequency (MHz) | 136 |
Minimum Operating Temperature (°C) | -40 |
Mode of Operation | CW |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Output Power (W) | 7.3(Typ) |
Packaging | Tape and Reel |
Part Status | NRND |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Process Technology | LDMOS |
Supplier Package | PLD-1.5W |
Typical Drain Efficiency (%) | 71 |
Typical Forward Transconductance (S) | 9.8 |
Typical Input Capacitance @ Vds (pF) | 107@7.5V |
Typical Output Capacitance @ Vds (pF) | 56@7.5V |
Typical Power Gain (dB) | 15.6(Max) |
Typical Reverse Transfer Capacitance @ Vds (pF) | 2.7@7.5V |
Application | VHF/UHF |
Drain Efficiency (Typ) | 71(%) |
Drain Source Voltage (Max) | 30(V) |
Forward Transconductance (Typ) | 9.8(S) |
Frequency (Max) | 941(MHz) |
Frequency (Min) | 136(MHz) |
Input Capacitance (Typ)@Vds | 107@7.5V(pF) |
Number of Elements | 1 |
Operating Temp Range | -65C to 150C |
Output Capacitance (Typ)@Vds | 56@7.5V(pF) |
Output Power (Max) | 7.3(TYP) |
Package Type | PLD-1.5W |
Power Dissipation (Max) | 182000(mW) |
Power Gain (Typ)@Vds | 15.2(MAX)@7.5V(dB) |
Rad Hardened | No |
Reverse Capacitance (Typ) | 2.7@7.5V(pF) |
Screening Level | Military |
Вес, г | 0.3 |
Техническая документация
Datasheet
pdf, 1474 КБ
Datasheet AFT09MS007NT1
pdf, 1414 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов