Транзистор CSD18504Q5A
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Описание
Транзисторы
TI N-Channel 8-23-12
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 75 A |
| Maximum Drain Source Resistance | 9.8 mΩ |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2.4V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3.1 W |
| Minimum Gate Threshold Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | VSONP |
| Pin Count | 8 |
| Series | NexFET |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 7.7 nC @ 4.5 V |
| Width | 5mm |
| Brand: | Texas Instruments |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Development Kit: | EM1402EVM |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 2 ns |
| Id - Continuous Drain Current: | 50 A |
| Manufacturer: | Texas Instruments |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | VSONP-8 |
| Pd - Power Dissipation: | 77 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Rds On - Drain-Source Resistance: | 6.6 mOhms |
| Rise Time: | 6.8 ns |
| Series: | CSD18504Q5A |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | NexFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 12 ns |
| Typical Turn-On Delay Time: | 3.2 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Brand | Texas Instruments |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 250 |
| Fall Time | 2 ns |
| Forward Transconductance - Min | 71 S |
| Id - Continuous Drain Current | 75 A |
| Manufacturer | Texas Instruments |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | VSON-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 77 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 19 nC |
| Rds On - Drain-Source Resistance | 5.3 mOhms |
| Rise Time | 6.8 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 12 ns |
| Typical Turn-On Delay Time | 3.2 ns |
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.5 V |
| Вес, г | 0.25 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
