BSC123N08NS3G, Диод выпрямительный PG-TDSON-8
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Описание
Описание Диод выпрямительный PG-TDSON-8
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 55 A |
Maximum Drain Source Resistance | 24 mΩ |
Maximum Drain Source Voltage | 80 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 3.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 66 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | TDSON |
Pin Count | 8 |
Series | OptiMOS 3 |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 19 nC @ 10 V |
Width | 6.1mm |
Brand: | Infineon Technologies |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 5000 |
Fall Time: | 4 ns |
Forward Transconductance - Min: | 22 S |
Id - Continuous Drain Current: | 55 A |
Manufacturer: | Infineon |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TDSON-8 |
Part # Aliases: | BSC123N8NS3GXT SP000443916 BSC123N08NS3GATMA1 |
Pd - Power Dissipation: | 66 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 25 nC |
Rds On - Drain-Source Resistance: | 10.3 mOhms |
Rise Time: | 18 ns |
Series: | OptiMOS 3 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | OptiMOS |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 19 ns |
Typical Turn-On Delay Time: | 12 ns |
Vds - Drain-Source Breakdown Voltage: | 80 V |
Vgs - Gate-Source Voltage: | -20 V, +20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Brand | Infineon Technologies |
Configuration | 1 N-Channel |
Factory Pack Quantity | 5000 |
Fall Time | 4 ns |
Forward Transconductance - Min | 22 S |
Height | 1.27 mm |
Id - Continuous Drain Current | 55 A |
Length | 5.9 mm |
Manufacturer | Infineon |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TDSON-8 |
Packaging | Reel |
Part # Aliases | BSC123N08NS3GATMA1 BSC123N08NS3GXT SP000443916 |
Pd - Power Dissipation | 66 W |
Product Category | MOSFET |
Qg - Gate Charge | 25 nC |
Rds On - Drain-Source Resistance | 10.3 mOhms |
Rise Time | 18 ns |
RoHS | Details |
Technology | Si |
Tradename | OptiMOS |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 19 ns |
Typical Turn-On Delay Time | 12 ns |
Vds - Drain-Source Breakdown Voltage | 80 V |
Vgs - Gate-Source Voltage | 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V |
Transistor Material | Si |
Unit Weight | 0.006067 oz |
Вес, г | 0.2 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet BSC123N08NS3 G
pdf, 587 КБ
Datasheet BSC123N08NS3GATMA1
pdf, 589 КБ
Дополнительная информация
Калькуляторы группы «Диоды выпрямительные»
Типы корпусов импортных диодов