SI2303CDS-T1-GE3, Транзистор: P-MOSFET; полевой; -30В; -2,7А; Idm: -10А; 1,5Вт; SOT23

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58 руб.

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Номенклатурный номер: 8030703093

Артикул: SI2303CDS-T1-GE3

Brand	Vishay/Siliconix
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	3000
Fall Time	8 ns
Forward Transconductance - Min	2 S
Id - Continuous Drain Current	2.7 A
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number Of Channels	1 Channel
Package / Case	SOT-23-3
Packaging	Cut Tape or Reel
Part # Aliases	SI2303BDS-T1-E3-S
Pd - Power Dissipation	2.3 W
Product Category	MOSFET
Product Type	MOSFET
Qg - Gate Charge	4 nC
Rds On - Drain-Source Resistance	190 mOhms
Rise Time	11 ns
Series	SI2
Subcategory	MOSFETs
Technology	Si
Tradename	TrenchFET
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	11 ns
Typical Turn-On Delay Time	4 ns
Vds - Drain-Source Breakdown Voltage	30 V
Vgs - Gate-Source Voltage	10 V
Vgs Th - Gate-Source Threshold Voltage	1 V
Channel Type	P
Maximum Continuous Drain Current	1.9 A
Maximum Drain Source Resistance	190 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Power Dissipation	1 W
Minimum Gate Threshold Voltage	1V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	2 nC @ 4.5 V, 4 nC @ 10 V
Width	1.4mm
Вес, г	0.408