N-Channel MOSFET, 72 A, 220 V PG-TO 263-3 IPB156N22NFDATMA1

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Номенклатурный номер: 8031012809

Артикул: IPB156N22NFDATMA1

Semiconductors\Discrete Semiconductors\MOSFETs

The Infineon OptiMOS fast diode in 200V, 220V, 250V and 300V is optimized for body diode hard commutation.

Channel Type	N
Maximum Continuous Drain Current	72 A
Maximum Drain Source Voltage	220 V
Mounting Type	SMD
Package Type	PG-TO 263-3
Brand:	Infineon Technologies
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	1000
Fall Time:	15 ns
Forward Transconductance - Min:	60 S
Id - Continuous Drain Current:	72 A
Manufacturer:	Infineon
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package/Case:	D2PAK-3(TO-263-3)
Packaging:	Reel, Cut Tape
Part # Aliases:	IPB156N22NFD SP001624408
Pd - Power Dissipation:	300 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	66 nC
Rds On - Drain-Source Resistance:	15.6 mOhms
Rise Time:	15 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	15 ns
Vds - Drain-Source Breakdown Voltage:	220 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V