MMBT3906WT1G, Биполярный транзистор, PNP, 40 В, 0.1 А, 0.35 Вт

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9 руб.

Мин. кол-во для заказа 52 шт.

от 263 шт. — 7 руб.

от 526 шт. — 5.70 руб.

от 1052 шт. — 5 руб.

Добавить в корзину 52 шт. на сумму 468 руб.

Номенклатурный номер: 8045547317

Артикул: MMBT3906WT1G

Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы

Биполярный транзистор, PNP, 40 В, 0.1 А, 0.35 Вт

Корпус	sot-323
Brand:	onsemi
Collector- Base Voltage VCBO:	40 V
Collector- Emitter Voltage VCEO Max:	40 V
Collector-Emitter Saturation Voltage:	400 mV
Configuration:	Single
Continuous Collector Current:	-0.2 A
DC Collector/Base Gain hfe Min:	60
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	250 MHz
Manufacturer:	onsemi
Maximum DC Collector Current:	200 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SC-70-3
Pd - Power Dissipation:	150 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	MMBT3906W
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Automotive	No
Configuration	Single
ECCN (US)	EAR99
Lead Shape	Gull-wing
Material	Si
Maximum Base Emitter Saturation Voltage (V)	0.85@1mA@10mA\|0.95@5mA@50mA
Maximum Collector Base Voltage (V)	40
Maximum Collector-Emitter Saturation Voltage (V)	0.25@1mA@10mA\|0.4@5mA@50mA
Maximum Collector-Emitter Voltage (V)	40
Maximum DC Collector Current (A)	0.2
Maximum Emitter Base Voltage (V)	5
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	150
Maximum Transition Frequency (MHz)	250(Min)
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Bipolar Small Signal
Standard Package Name	SOT
Supplier Package	SC-70
Type	PNP
Вес, г	0.017