BSP295H6327, Транзистор полевой N-канальный 60В 1.8А 1.8Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 60В 1.8А 1.8Вт
Технические параметры
| Корпус | SOT-223 | |
| Brand: | Infineon Technologies | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
| Fall Time: | 19 ns | |
| Forward Transconductance - Min: | 0.8 S | |
| Id - Continuous Drain Current: | 1.8 A | |
| Manufacturer: | Infineon | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | SOT-223-4 | |
| Part # Aliases: | BSP295 H6327 SP001058618 | |
| Pd - Power Dissipation: | 1.8 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 14 nC | |
| Qualification: | AEC-Q101 | |
| Rds On - Drain-Source Resistance: | 220 mOhms | |
| Rise Time: | 9.9 ns | |
| Series: | BSP295 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Typical Turn-Off Delay Time: | 27 ns | |
| Typical Turn-On Delay Time: | 5.4 ns | |
| Vds - Drain-Source Breakdown Voltage: | 60 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Maximum Drain Source Voltage | 60 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Operating Temperature | +150 °C | |
| Maximum Power Dissipation | 1.8 W | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-223 | |
| Pin Count | 3 | |
| Series | SIPMOS | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Width | 3.5mm | |
| AEC Qualified Number | AEC-Q101 | |
| Automotive | Yes | |
| Maximum Continuous Drain Current - (A) | 1.8 | |
| Maximum Drain Source Resistance - (mOhm) | 300@10V | |
| Maximum Drain Source Voltage - (V) | 60 | |
| Maximum Gate Source Voltage - (V) | ??20 | |
| Maximum Gate Threshold Voltage - (V) | 1.8 | |
| Maximum Power Dissipation - (mW) | 1800 | |
| Military | No | |
| Operating Temperature - (??C) | -55~150 | |
| Packaging | Tape and Reel | |
| Process Technology | SIPMOS | |
| Standard Package Name | SOT | |
| Supplier Package | SOT-223 | |
| Typical Gate Charge @ 10V - (nC) | 14 | |
| Typical Gate Charge @ Vgs - (nC) | 14@10V | |
| Typical Input Capacitance @ Vds - (pF) | 295@25V | |
| Вес, г | 0.85 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 442 КБ
Datasheet
pdf, 292 КБ
Datasheet BSP295H6327XTSA1
pdf, 442 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
