IXYX100N120C3, IXYX100N120C3 IGBT, 188 A 1200 V, 3-Pin PLUS247, Through Hole
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses.
Технические параметры
| Channel Type | N |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 188 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 1150 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | PLUS247 |
| Pin Count | 3 |
| Switching Speed | 50kHz |
| Transistor Configuration | Single |
| Brand: | IXYS |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 3.5 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 195 A |
| Continuous Collector Current Ic Max: | 188 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | IXYS |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247PLUS-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 1.15 kW |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Series: | IXYX100N120C3 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | XPT |
| Вес, г | 3 |
Техническая документация
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