NX7002AK,215, Транзистор полевой N-канальный 60В
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1020 шт. со склада г.Москва, срок 12 дней
4 руб.
Мин. кол-во для заказа 146 шт.
от 228 шт. —
3 руб.
от 455 шт. —
2.20 руб.
от 909 шт. —
2 руб.
Добавить в корзину 146 шт.
на сумму 584 руб.
Альтернативные предложения3
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 60В
Технические параметры
| Корпус | sot-23 | |
| Base Product Number | NX7002 -> | |
| Current - Continuous Drain (Id) @ 25В°C | 190mA (Ta) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | |
| ECCN | EAR99 | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 0.43nC @ 4.5V | |
| HTSUS | 8541.29.0095 | |
| Input Capacitance (Ciss) (Max) @ Vds | 17pF @ 10V | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | -55В°C ~ 150В°C (TJ) | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Power Dissipation (Max) | 265mW (Ta), 1.33W (Tc) | |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 100mA, 10V | |
| REACH Status | REACH Unaffected | |
| RoHS Status | ROHS3 Compliant | |
| Supplier Device Package | TO-236AB | |
| Technology | MOSFET (Metal Oxide) | |
| Vgs (Max) | В±20V | |
| Vgs(th) (Max) @ Id | 2.1V @ 250ВµA | |
| Continuous Drain Current (Id) @ 25В°C | 190mA | |
| Power Dissipation-Max (Ta=25В°C) | 265mW | |
| Rds On - Drain-Source Resistance | 4.5О© @ 100mA,10V | |
| Transistor Polarity | N Channel | |
| Vds - Drain-Source Breakdown Voltage | 60V | |
| Vgs - Gate-Source Voltage | 2.1V @ 250uA | |
| кол-во в упаковке | 3000 | |
| Brand | Nexperia | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 3000 | |
| Fall Time | 14 ns | |
| Forward Transconductance - Min | 230 mS | |
| Id - Continuous Drain Current | 190 mA | |
| Manufacturer | Nexperia | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Packaging | Reel | |
| Pd - Power Dissipation | 1.33 W | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 0.33 nC | |
| Rise Time | 7 ns | |
| RoHS | Details | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 20 ns | |
| Typical Turn-On Delay Time | 6 ns | |
| Vgs th - Gate-Source Threshold Voltage | 1.6 V | |
| Channel Type | N | |
| Forward Diode Voltage | 1.2V | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Resistance | 4.5 Ω | |
| Maximum Drain Source Voltage | 60 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 1.33 W | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Series | NX7002AK | |
| Transistor Configuration | Single | |
| Typical Gate Charge @ Vgs | 0.33 nC @ 4.5 V | |
| Width | 1.4mm | |
| Вес, г | 0.01 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet NX7002AK,215
pdf, 719 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
