Current - Continuous Drain (Id) @ 25В°C	3.6A(Tc)
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	340pF @ 25V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-252-3, DPak(2 Leads+Tab), SC-63
Packaging	Digi-ReelВ®
Part Status	Active
Power Dissipation (Max)	2.5W(Ta), 42W(Tc)
Rds On (Max) @ Id, Vgs	1.5Ohm @ 2.2A, 10V
Series	-
Supplier Device Package	D-Pak
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Id - непрерывный ток утечки	3.6 A
Pd - рассеивание мощности	42 W
Qg - заряд затвора	20 nC
Rds Вкл - сопротивление сток-исток	1.5 Ohms
Vds - напряжение пробоя сток-исток	200 V
Vgs - напряжение затвор-исток	20 V, + 20 V
Vgs th - пороговое напряжение затвор-исток	4 V
Вид монтажа	SMD/SMT
Канальный режим	Enhancement
Категория продукта	МОП-транзистор
Количество каналов	1 Channel
Конфигурация	Single
Максимальная рабочая температура	+ 150 C
Минимальная рабочая температура	55 C
Подкатегория	MOSFETs
Полярность транзистора	P-Channel
Размер фабричной упаковки	3000
Серия	IRFR/U
Технология	Si
Тип продукта	MOSFET
Торговая марка	Vishay Semiconductors
Упаковка	Tube
Упаковка / блок	TO-252-3
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Maximum Continuous Drain Current (A)	3.6
Maximum Drain Source Resistance (mOhm)	1500 10V
Maximum Drain Source Voltage (V)	200
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum IDSS (uA)	100
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	2500
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
PCB changed	2
Pin Count	3
PPAP	No
Product Category	Power MOSFET
Standard Package Name	TO-252
Supplier Package	DPAK
Tab	Tab
Typical Fall Time (ns)	19
Typical Gate Charge @ 10V (nC)	20(Max)
Typical Gate Charge @ Vgs (nC)	20(Max)10V
Typical Input Capacitance @ Vds (pF)	340 25V
Typical Rise Time (ns)	27
Typical Turn-Off Delay Time (ns)	7.3
Typical Turn-On Delay Time (ns)	8.8
Maximum Continuous Drain Current	3.6 A
Maximum Drain Source Resistance	1.5 Ω
Maximum Drain Source Voltage	200 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Package Type	DPAK(TO-252)
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	20 nC @ 10 V
Width	6.22mm
Вес, г	0.66

IRFR9220

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