FDMA1024NZ, Dual N-Channel MOSFET, 5 A, 20 V, 6-Pin MicroFET 2 x 2 FDMA1024NZ

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500 руб.

Кратность заказа 5 шт.

Добавить в корзину 5 шт. на сумму 2 500 руб.

Номенклатурный номер: 8509232290

Артикул: FDMA1024NZ

Semiconductors\Discrete Semiconductors\MOSFETs

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density.

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	5 A
Maximum Drain Source Resistance	114 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.4 W
Minimum Gate Threshold Voltage	0.4V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	2
Package Type	MicroFET 2x2
Pin Count	6
Series	PowerTrench
Transistor Configuration	Isolated
Transistor Material	Si
Typical Gate Charge @ Vgs	5.2 nC @ 4.5 V
Width	2mm
Brand:	onsemi/Fairchild
Channel Mode:	Enhancement
Configuration:	Dual
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	2.2 ns
Id - Continuous Drain Current:	5 A
Manufacturer:	onsemi
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	2 Channel
Package / Case:	MicroFET-6
Pd - Power Dissipation:	1.4 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signal
Qg - Gate Charge:	5.2 nC
Rds On - Drain-Source Resistance:	54 mOhms
Rise Time:	2.2 ns
Series:	FDMA1024NZ
Subcategory:	MOSFETs
Technology:	Si
Tradename:	PowerTrench
Transistor Polarity:	N-Channel
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	18 ns
Typical Turn-On Delay Time:	5.3 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-8 V, +8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	5