BSS169H6327, Транзистор полевой N-канальный 100B, 0.17А 0.36Вт, 6 Ом
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 100B, 0.17А 0.36Вт, 6 Ом
Технические параметры
| Корпус | sot-23 | |
| Brand | Infineon Technologies | |
| Channel Mode | Depletion | |
| Configuration | 1 N-Channel | |
| Factory Pack Quantity | 6000 | |
| Fall Time | 27 ns | |
| Forward Transconductance - Min | 100 mS | |
| Height | 1.1 mm | |
| Id - Continuous Drain Current | 170 mA | |
| Length | 2.9 mm | |
| Manufacturer | Infineon | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number of Channels | 1 Channel | |
| Package / Case | SOT-23-3 | |
| Packaging | Reel | |
| Part # Aliases | BSS169H6327XT BSS169H6327XTSA1 SP000702572 | |
| Pd - Power Dissipation | 360 mW | |
| Product | MOSFET Small Signal | |
| Product Category | MOSFET | |
| Qg - Gate Charge | 2.8 nC | |
| Rds On - Drain-Source Resistance | 2.9 Ohms | |
| Rise Time | 2.7 ns | |
| RoHS | Details | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 11 ns | |
| Typical Turn-On Delay Time | 2.9 ns | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Vgs - Gate-Source Voltage | 20 V | |
| Vgs th - Gate-Source Threshold Voltage | -2.9 V | |
| Width | 1.3 mm | |
| Brand: | Infineon Technologies | |
| Channel Mode: | Depletion | |
| Configuration: | Single | |
| Factory Pack Quantity: | 3000 | |
| Fall Time: | 27 ns | |
| Forward Transconductance - Min: | 0.2 S | |
| Id - Continuous Drain Current: | 170 mA | |
| Manufacturer: | Infineon | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package/Case: | SOT-23-3 | |
| Part # Aliases: | SP000702572 BSS169H6327XT BSS169H6327XTSA1 | |
| Pd - Power Dissipation: | 360 mW | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Product: | MOSFET Small Signals | |
| Qg - Gate Charge: | 2.1 nC | |
| Qualification: | AEC-Q101 | |
| Rds On - Drain-Source Resistance: | 2.9 Ohms | |
| Rise Time: | 2.7 ns | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | SIPMOS Small Signal Transistor | |
| Typical Turn-Off Delay Time: | 11 ns | |
| Typical Turn-On Delay Time: | 2.9 ns | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 2.9 V | |
| Вес, г | 0.05 |
Техническая документация
Datasheet
pdf, 396 КБ
Datasheet BSS169H6327XTSA1
pdf, 412 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
