Корпус	so-8
Continuous Drain Current (Id) @ 25В°C	11.4A
Power Dissipation-Max (Ta=25В°C)	2.5W
Rds On - Drain-Source Resistance	24mО© @ 9.1A,10V
Transistor Polarity	P Channel
Vds - Drain-Source Breakdown Voltage	30V
Vgs - Gate-Source Voltage	3V @ 250uA
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single Quad Drain Triple Source
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	8.1
Maximum Continuous Drain Current on PCB @ TC=25°C (A)	8.1
Maximum Diode Forward Voltage (V)	1.2
Maximum Drain Source Resistance (mOhm)	24 10V
Maximum Drain Source Voltage (V)	30
Maximum Gate Source Leakage Current (nA)	100
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	3
Maximum IDSS (uA)	1
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)	85
Maximum Operating Temperature (°C)	150
Maximum Positive Gate Source Voltage (V)	20
Maximum Power Dissipation (mW)	2500
Maximum Power Dissipation on PCB @ TC=25°C (W)	2.5
Maximum Pulsed Drain Current @ TC=25°C (A)	50
Minimum Gate Threshold Voltage (V)	1
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
Packaging	Tape and Reel
Part Status	NRND
PCB changed	8
Pin Count	8
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SOP
Supplier Package	SOIC N
Typical Diode Forward Voltage (V)	0.75
Typical Fall Time (ns)	12\|16
Typical Gate Charge @ 10V (nC)	32
Typical Gate Charge @ Vgs (nC)	32 10V\|15 4.5V
Typical Gate Plateau Voltage (V)	3.5
Typical Gate to Drain Charge (nC)	7.5
Typical Gate to Source Charge (nC)	4
Typical Input Capacitance @ Vds (pF)	1350 15V
Typical Output Capacitance (pF)	215
Typical Reverse Recovery Charge (nC)	22
Typical Reverse Recovery Time (ns)	34
Typical Reverse Transfer Capacitance @ Vds (pF)	185 15V
Typical Rise Time (ns)	8\|35
Typical Turn-Off Delay Time (ns)	40\|45
Typical Turn-On Delay Time (ns)	10\|42
Maximum Continuous Drain Current	8.1 A
Maximum Drain Source Resistance	24 mΩ
Maximum Drain Source Voltage	30 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	SOIC
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	15 nC @ 4.5 V, 32 nC @ 10 V
Width	4mm
Brand:	Vishay Semiconductors
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	12 ns
Forward Transconductance - Min:	23 S
Id - Continuous Drain Current:	11.4 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOIC-8
Part # Aliases:	SI4435DDY-GE3
Pd - Power Dissipation:	5 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	50 nC
Rds On - Drain-Source Resistance:	24 mOhms
Rise Time:	8 ns
Series:	SI4
Subcategory:	MOSFETs
Technology:	Si
Tradename:	TrenchFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	45 ns
Typical Turn-On Delay Time:	10 ns
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.2

SI4435DDY-T1-GE3, Транзистор полевой P-канальный 30В 11.4А 5Вт

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