IRL7833PBF, Транзистор полевой N-канальный 30В 150А, 140Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 30В 150А, 140Вт
Технические параметры
| Корпус | TO-220AB | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Resistance | 4 mΩ | |
| Maximum Drain Source Voltage | 30 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Maximum Operating Temperature | +175 °C | |
| Maximum Power Dissipation | 140 W | |
| Minimum Gate Threshold Voltage | 1.4V | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Through Hole | |
| Number of Elements per Chip | 1 | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Series | HEXFET | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 32 nC @ 4.5 V | |
| Brand: | Infineon Technologies | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 | |
| Id - Continuous Drain Current: | 150 A | |
| Manufacturer: | Infineon | |
| Maximum Operating Temperature: | +175 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | Through Hole | |
| Number of Channels: | 1 Channel | |
| Package / Case: | TO-220-3 | |
| Packaging: | Tube | |
| Part # Aliases: | IRL7833PBF SP001550382 | |
| Pd - Power Dissipation: | 140 W | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Qg - Gate Charge: | 32 nC | |
| Rds On - Drain-Source Resistance: | 4.5 mOhms | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Vds - Drain-Source Breakdown Voltage: | 30 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 1.8 V | |
| Current - Continuous Drain (Id) @ 25В°C | 150A(Tc) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4170pF @ 15V | |
| Manufacturer | Infineon Technologies | |
| Operating Temperature | -55В°C ~ 175В°C(TJ) | |
| Package / Case | TO-220-3 | |
| Packaging | Tube | |
| Part Status | Active | |
| Power Dissipation (Max) | 140W(Tc) | |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 38A, 10V | |
| Supplier Device Package | TO-220AB | |
| Technology | MOSFET(Metal Oxide) | |
| Vgs (Max) | В±20V | |
| Vgs(th) (Max) @ Id | 2.3V @ 250ВµA | |
| Вес, г | 3.5 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
