Корпус	sot-23
Current - Continuous Drain (Id) @ 25В°C	4.4A(Tc)
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	21nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	595pF @ 20V
Manufacturer	Vishay Siliconix
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-236-3, SC-59, SOT-23-3
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	1.25W(Ta), 2.5W(Tc)
Rds On (Max) @ Id, Vgs	77mOhm @ 3.1A, 10V
Series	TrenchFETВ®
Supplier Device Package	SOT-23-3(TO-236)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	2.5V @ 250ВµA
Automotive	No
Channel Mode	Enhancement
Channel Type	P
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	3.1
Maximum Drain Source Resistance (mOhm)	77@10V
Maximum Drain Source Voltage (V)	40
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	1250
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-55 to 150
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	TrenchFET
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-23
Typical Fall Time (ns)	8\|10
Typical Gate Charge @ 10V (nC)	13.6
Typical Gate Charge @ Vgs (nC)	13.6@10V\|7@4.5V
Typical Input Capacitance @ Vds (pF)	595@20V
Typical Rise Time (ns)	27\|9
Typical Turn-Off Delay Time (ns)	18\|20
Typical Turn-On Delay Time (ns)	40\|8
Maximum Continuous Drain Current	4.4 A
Maximum Drain Source Resistance	108 mΩ
Maximum Drain Source Voltage	40 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	2.5 W
Minimum Gate Threshold Voltage	1.2V
Minimum Operating Temperature	-55 °C
Package Type	SOT-23
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	13.6 nC @ 10 V
Width	1.4mm
Вес, г	0.05

SI2319CDS-T1-GE3, Транзистор полевой P-канальный 40В 4.4А 2.5Вт

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