BSS123-7-F, Транзистор полевой N-канальный 100В 170мА, 0,3Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 100В 170мА, 0,3Вт
Технические параметры
| Корпус | sot-23 | |
| Brand | Diodes Incorporated | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Factory Pack Quantity | 3000 | |
| Fall Time | 8 ns | |
| Forward Transconductance - Min | 0.08 S | |
| Id - Continuous Drain Current | 170 mA | |
| Manufacturer | Diodes Incorporated | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -55 C | |
| Mounting Style | SMD/SMT | |
| Number Of Channels | 1 Channel | |
| Package / Case | SOT-23-3 | |
| Packaging | Cut Tape or Reel | |
| Pd - Power Dissipation | 300 mW | |
| Product | MOSFET Small Signal | |
| Product Category | MOSFET | |
| Product Type | MOSFET | |
| Rds On - Drain-Source Resistance | 6 Ohms | |
| Rise Time | 8 ns | |
| Series | BSS123 | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Transistor Polarity | N-Channel | |
| Transistor Type | 1 N-Channel | |
| Type | Enhancement Mode Field Effect Transistor | |
| Typical Turn-Off Delay Time | 13 ns | |
| Typical Turn-On Delay Time | 8 ns | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Vgs - Gate-Source Voltage | 20 V | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 170 mA | |
| Maximum Drain Source Resistance | 10 Ω | |
| Maximum Drain Source Voltage | 100 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 mW | |
| Mounting Type | Surface Mount | |
| Number of Elements per Chip | 1 | |
| Package Type | SOT-23 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Brand: | Diodes Incorporated | |
| Channel Mode: | Enhancement | |
| Configuration: | Single | |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
| Fall Time: | 8 ns | |
| Forward Transconductance - Min: | 0.08 S | |
| Id - Continuous Drain Current: | 170 mA | |
| Manufacturer: | Diodes Incorporated | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -55 C | |
| Mounting Style: | SMD/SMT | |
| Number of Channels: | 1 Channel | |
| Package / Case: | SOT-23-3 | |
| Pd - Power Dissipation: | 300 mW | |
| Product Category: | MOSFET | |
| Product Type: | MOSFET | |
| Product: | MOSFET Small Signal | |
| Rds On - Drain-Source Resistance: | 6 Ohms | |
| Rise Time: | 8 ns | |
| Series: | BSS123 | |
| Subcategory: | MOSFETs | |
| Technology: | Si | |
| Transistor Polarity: | N-Channel | |
| Transistor Type: | 1 N-Channel | |
| Type: | Enhancement Mode Field Effect Transistor | |
| Typical Turn-Off Delay Time: | 13 ns | |
| Typical Turn-On Delay Time: | 8 ns | |
| Vds - Drain-Source Breakdown Voltage: | 100 V | |
| Vgs - Gate-Source Voltage: | -20 V, +20 V | |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV | |
| Вес, г | 0.03 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 440 КБ
Datasheet BSS123-7-F
pdf, 523 КБ
Datasheet BSS123-7-F
pdf, 116 КБ
Datasheet BSS123-7-F
pdf, 507 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
