IRFB4310PBF, Транзистор полевой N-канальный 100В 130А 300Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой N-канальный 100В 130А 300Вт
Технические параметры
| Корпус | TO-220AB | |
| Automotive | No | |
| Channel Mode | Enhancement | |
| Channel Type | N | |
| Configuration | Single | |
| ECCN (US) | EAR99 | |
| EU RoHS | Compliant with Exemption | |
| Lead Shape | Through Hole | |
| Maximum Continuous Drain Current (A) | 130 | |
| Maximum Drain Source Resistance (MOhm) | 7 10V | |
| Maximum Drain Source Voltage (V) | 100 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Operating Temperature (°C) | 175 | |
| Maximum Power Dissipation (mW) | 300000 | |
| Minimum Operating Temperature (°C) | -55 | |
| Mounting | Through Hole | |
| Number of Elements per Chip | 1 | |
| Packaging | Tube | |
| Part Status | Active | |
| PCB changed | 3 | |
| Pin Count | 3 | |
| PPAP | No | |
| Process Technology | HEXFET | |
| Product Category | Power MOSFET | |
| Standard Package Name | TO-220 | |
| Supplier Package | TO-220AB | |
| Tab | Tab | |
| Typical Fall Time (ns) | 78 | |
| Typical Gate Charge @ 10V (nC) | 170 | |
| Typical Gate Charge @ Vgs (nC) | 170 10V | |
| Typical Input Capacitance @ Vds (pF) | 7670 50V | |
| Typical Rise Time (ns) | 110 | |
| Typical Turn-Off Delay Time (ns) | 68 | |
| Typical Turn-On Delay Time (ns) | 26 | |
| Maximum Continuous Drain Current | 130 A | |
| Maximum Drain Source Resistance | 7 mΩ | |
| Maximum Drain Source Voltage | 100 V | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Operating Temperature | +175 °C | |
| Maximum Power Dissipation | 300 W | |
| Minimum Gate Threshold Voltage | 2V | |
| Minimum Operating Temperature | -55 °C | |
| Mounting Type | Through Hole | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Transistor Configuration | Single | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
| Width | 4.82mm | |
| Current - Continuous Drain (Id) @ 25В°C | 130A(Tc) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| FET Feature | - | |
| FET Type | N-Channel | |
| Gate Charge (Qg) (Max) @ Vgs | 250nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 7670pF @ 50V | |
| Manufacturer | Infineon Technologies | |
| Operating Temperature | -55В°C ~ 175В°C(TJ) | |
| Package / Case | TO-220-3 | |
| Power Dissipation (Max) | 300W(Tc) | |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V | |
| Supplier Device Package | TO-220AB | |
| Technology | MOSFET(Metal Oxide) | |
| Vgs (Max) | В±20V | |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA | |
| Вес, г | 3.5 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 376 КБ
Datasheet
pdf, 378 КБ
Datasheet IRFB4310PBF
pdf, 383 КБ
Datasheet IRFB4310PBF
pdf, 394 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
