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IKB30N65EH5ATMA1, IGBT Transistors INDUSTRY 14

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1 150 руб.

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Номенклатурный номер: 9001451499

PartNumber: IKB30N65EH5ATMA1

Бренд: INFINEON TECHNOLOGIES AG.

Описание

TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.

Технические параметры

Brand:	Infineon Technologies
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.65 V
Configuration:	Single
Continuous Collector Current at 25 C:	55 A
Continuous Collector Current Ic Max:	55 A
Factory Pack Quantity: Factory Pack Quantity:	1000
Gate-Emitter Leakage Current:	100 nA
Manufacturer:	Infineon
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-40 C
Mounting Style:	SMD/SMT
Package / Case:	TO-263-3
Packaging:	Reel, Cut Tape
Part # Aliases:	IKB30N65EH5 SP001502648
Pd - Power Dissipation:	188 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	Trenchstop IGBT5
Subcategory:	IGBTs
Technology:	Si
Tradename:	TRENCHSTOP
Вес, г	1.56