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SI1967DH-T1-E3, Trans MOSFET P-CH 20V 1.3A 6-Pin SC-70 T/R

Ном. номер: 8000997122
PartNumber: SI1967DH-T1-E3
Производитель: Vishay
Фото 1/2 SI1967DH-T1-E3, Trans MOSFET P-CH 20V 1.3A 6-Pin SC-70 T/R
* Изображения служат только для ознакомления,
см. техническую документацию
Фото 2/2 SI1967DH-T1-E3, Trans MOSFET P-CH 20V 1.3A 6-Pin SC-70 T/R
51 руб.
347 шт.,
срок 4-6 недель
от 10 шт. — 42.70 руб.
от 25 шт. — 40.40 руб.
Мин. кол-во для заказа 3 шт.
Добавить в корзину 3 шт. на сумму 153 руб.

Технические параметры

EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
Product Category
Power MOSFET
Configuration
Dual
Process Technology
TrenchFET
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
2
Maximum Drain Source Voltage (V)
20
Maximum Gate Source Voltage (V)
±8
Maximum Gate Threshold Voltage (V)
1
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
1.3
Maximum Gate Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain Source Resistance (mOhm)
490@4.5V
Typical Gate Charge @ Vgs (nC)
2.6@8V|1.6@4.5V
Typical Gate to Drain Charge (nC)
0.33
Typical Gate to Source Charge (nC)
0.36
Typical Reverse Recovery Charge (nC)
15
Typical Input Capacitance @ Vds (pF)
110@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
16@10V
Minimum Gate Threshold Voltage (V)
0.4
Typical Output Capacitance (pF)
26
Maximum Power Dissipation (mW)
740
Typical Fall Time (ns)
10
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
15
Typical Turn-On Delay Time (ns)
12
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Automotive
No
Pin Count
6
Supplier Package
SC-70
Standard Package Name
SC
Military
No
Mounting
Surface Mount
Package Height
1(Max)
Package Length
2
Package Width
1.25
PCB changed
6
Lead Shape
Gull-wing
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
220
Maximum Positive Gate Source Voltage (V)
8
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
1
Typical Gate Plateau Voltage (V)
1.8
Maximum Diode Forward Voltage (V)
1.2
Typical Diode Forward Voltage (V)
0.8
Typical Reverse Recovery Time (ns)
25
Maximum Pulsed Drain Current @ TC=25°C (A)
3
Maximum Power Dissipation on PCB @ TC=25°C (W)
0.74

Дополнительная информация

Datasheet SI1967DH-T1-E3

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