SI1967DH-T1-E3, MOSFET -20V Vds 8V Vgs SC70-6
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Описание
Trans MOSFET P-CH 20V 1.3A 6-Pin SC-70 T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Dual |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 1.3 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 1 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Maximum Drain Source Resistance (mOhm) | 490@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum IDSS (uA) | 1 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 220 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 8 |
| Maximum Power Dissipation (mW) | 740 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 0.74 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 3 |
| Minimum Gate Threshold Voltage (V) | 0.4 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 6 |
| Pin Count | 6 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SC-70 |
| Typical Diode Forward Voltage (V) | 0.8 |
| Typical Fall Time (ns) | 10 |
| Typical Gate Charge @ Vgs (nC) | 2.6@8V|1.6@4.5V |
| Typical Gate Plateau Voltage (V) | 1.8 |
| Typical Gate to Drain Charge (nC) | 0.33 |
| Typical Gate to Source Charge (nC) | 0.36 |
| Typical Input Capacitance @ Vds (pF) | 110@10V |
| Typical Output Capacitance (pF) | 26 |
| Typical Reverse Recovery Charge (nC) | 15 |
| Typical Reverse Recovery Time (ns) | 25 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 16@10V |
| Typical Rise Time (ns) | 27 |
| Typical Turn-Off Delay Time (ns) | 15 |
| Typical Turn-On Delay Time (ns) | 12 |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 271 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
