IRF620STRLPBF
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Описание
МОП-транзистор N-Chan 200V 5.2 Amp
Технические параметры
| Категория продукта | МОП-транзистор |
| Подкатегория | MOSFETs |
| Размер фабричной упаковки | 800 |
| Серия | IRF |
| Технология | Si |
| Тип продукта | MOSFET |
| Торговая марка | Vishay / Siliconix |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 5.2 |
| Maximum Diode Forward Voltage (V) | 1.8 |
| Maximum Drain Source Resistance (mOhm) | 800@10V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Resistance (Ohm) | 3.5 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Power Dissipation (mW) | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 18 |
| Minimum Gate Resistance (Ohm) | 0.8 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Tab | Tab |
| Typical Fall Time (ns) | 13 |
| Typical Gate Charge @ 10V (nC) | 14(Max) |
| Typical Gate Charge @ Vgs (nC) | 14(Max)@10V |
| Typical Gate Plateau Voltage (V) | 6.8 |
| Typical Gate to Drain Charge (nC) | 7.9(Max) |
| Typical Gate to Source Charge (nC) | 3(Max) |
| Typical Input Capacitance @ Vds (pF) | 260@25V |
| Typical Output Capacitance (pF) | 100 |
| Typical Reverse Recovery Charge (nC) | 910 |
| Typical Reverse Recovery Time (ns) | 150 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 30@25V |
| Typical Rise Time (ns) | 22 |
| Typical Turn-Off Delay Time (ns) | 19 |
| Typical Turn-On Delay Time (ns) | 7.2 |
Техническая документация
Datasheet
pdf, 219 КБ
Datasheet IRF620STRLPBF
pdf, 142 КБ
