IS61WV25616BLL-10TL, SRAM 4Mb 256Kx16 10ns Async SRAM 3.3v
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Описание
SRAM - микросхема асинхронной памяти 4 Мб (256 КБ x 16), параллельная 10 нс 44-TSOP II
Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8542.32.00.41 |
| Package Length | 18.52(Max) |
| Package Width | 10.29(Max) |
| Mounting | Surface Mount |
| PCB changed | 44 |
| Lead Shape | Gull-wing |
| Package Height | 1.05(Max) |
| Chip Density (bit) | 4M |
| Number of Words | 256K |
| Number of Bits/Word (bit) | 16 |
| Data Rate Architecture | SDR |
| Address Bus Width (bit) | 18 |
| Number of Ports | 1 |
| Timing Type | Asynchronous |
| Max. Access Time (ns) | 10 |
| Process Technology | CMOS |
| Minimum Operating Supply Voltage (V) | 2.4 |
| Typical Operating Supply Voltage (V) | 2.5|3.3 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Operating Current (mA) | 40 |
| Minimum Operating Temperature (°C) | 0 |
| Maximum Operating Temperature (°C) | 70 |
| Supplier Temperature Grade | Commercial |
| Standard Package Name | SOP |
| Supplier Package | TSOP-II |
| Pin Count | 44 |
| Access Time | 10ns |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Memory Format | SRAM |
| Memory Interface | Parallel |
| Memory Size | 4Mb (256K x 16) |
| Memory Type | Volatile |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Mounting Type | Surface Mount |
| Operating Temperature | 0В°C ~ 70В°C (TA) |
| Package | Tray |
| Package / Case | 44-TSOP (0.400"", 10.16mm Width) |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | 44-TSOP II |
| Technology | SRAM - Asynchronous |
| Voltage - Supply | 2.4V ~ 3.6V |
| Write Cycle Time - Word, Page | 10ns |
| Вес, г | 0.47 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Микросхемы памяти»
Типы корпусов импортных микросхем
