SIHG47N60E-GE3
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Описание
Описание Транзистор: N-MOSFET, полевой, 600В, 30А, 357Вт, TO247AC Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| PCB changed | 3 |
| Lead Shape | Through Hole |
| Package Width | 5.31(Max) |
| Package Height | 20.82(Max) |
| Package Length | 15.87(Max) |
| Mounting | Through Hole |
| Tab | Tab |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 600 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 3.5 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 47 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum IDSS (uA) | 1 |
| Maximum Drain Source Resistance (mOhm) | 64@10V |
| Typical Gate Charge @ Vgs (nC) | 148@10V |
| Typical Gate Charge @ 10V (nC) | 148 |
| Typical Input Capacitance @ Vds (pF) | 4810@100V |
| Maximum Power Dissipation (mW) | 357000 |
| Typical Fall Time (ns) | 82 |
| Typical Rise Time (ns) | 72 |
| Typical Turn-Off Delay Time (ns) | 93 |
| Typical Turn-On Delay Time (ns) | 28 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Automotive | No |
| Pin Count | 3 |
| Supplier Package | TO-247AC |
| Standard Package Name | TO-247 |
| Military | No |
| Maximum Continuous Drain Current | 47 A |
| Maximum Drain Source Resistance | 64 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 357 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Package Type | TO-247AC |
| Series | E Series |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 147 nC @ 10 V |
| Width | 5.31mm |
