SI7772DP-T1-GE3, MOSFET 30V Vds 20V Vgs PowerPAK SO-8
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Описание
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET ® technologies and low thermal resistance.
Технические параметры
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 37 S |
| Id - Continuous Drain Current: | 35.6 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerPAK-SO-8 |
| Part # Aliases: | SI7772DP-GE3 |
| Pd - Power Dissipation: | 29.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 28 nC |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Rise Time: | 18 ns |
| Series: | SI7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 15 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 12.9 |
| Maximum Drain Source Resistance (mOhm) | 13@10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 200 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3900 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAK SO |
| Typical Fall Time (ns) | 9|10 |
| Typical Gate Charge @ 10V (nC) | 18.5 |
| Typical Gate Charge @ Vgs (nC) | 18.5@10V|8.3@4.5V |
| Typical Input Capacitance @ Vds (pF) | 1084@15V |
| Typical Rise Time (ns) | 18|11 |
| Typical Turn-Off Delay Time (ns) | 15|17 |
| Typical Turn-On Delay Time (ns) | 8|16 |
Техническая документация
Datasheet
pdf, 368 КБ
