SI7846DP-T1-E3
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см. техническую документацию
см. техническую документацию
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Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Product Category | Power MOSFET |
| Process Technology | TrenchFET |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 150 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Continuous Drain Current (A) | 4 |
| Maximum Drain Source Resistance (mOhm) | 50@10V |
| Typical Gate Charge @ Vgs (nC) | 30@10V |
| Typical Gate Charge @ 10V (nC) | 30 |
| Maximum Power Dissipation (mW) | 1900 |
| Typical Fall Time (ns) | 10 |
| Typical Rise Time (ns) | 7 |
| Typical Turn-Off Delay Time (ns) | 22 |
| Typical Turn-On Delay Time (ns) | 12 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Automotive | Yes |
| Pin Count | 8 |
| Supplier Package | PowerPAK SO |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 1.07(Max) |
| Package Length | 4.9 |
| Package Width | 5.89 |
| PCB changed | 8 |
| Lead Shape | No Lead |
Техническая документация
Datasheet SI7846DP-T1-E3
pdf, 306 КБ
