BC846B-7-F
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см. техническую документацию
см. техническую документацию
3 руб.
Мин. кол-во для заказа 120 шт.
Добавить в корзину 120 шт.
на сумму 360 руб.
Технические параметры
| Collector-Emitter Breakdown Voltage | 65V |
| Maximum DC Collector Current | 100mA |
| Pd - Power Dissipation | 300mW |
| Transistor Type | NPN |
| Maximum Collector Base Voltage | 80 V |
| Maximum Collector Emitter Voltage | 65 V |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Frequency | 300 MHz |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 300 mW |
| Minimum DC Current Gain | 200 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 80 V |
| Collector- Emitter Voltage VCEO Max: | 65 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Configuration: | Single |
| DC Collector/Base Gain hfe Min: | 200 |
| Emitter- Base Voltage VEBO: | 6 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 300 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 310 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | BC846 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
