TK72A12N1.S4X
6 шт. со склада г.Москва, срок 6-9 дней
1 010 руб.
Добавить в корзину 1 шт.
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Описание
Электроэлемент
MOSFET N-CH 120V 72A TO220SIS
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 72A(Tc) |
| Drain to Source Voltage (Vdss) | 120V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8100pF @ 60V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Tube |
| Part Status | Active |
| Power Dissipation (Max) | 45W(Tc) |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 36A, 10V |
| Series | U-MOSVIII-H |
| Supplier Device Package | TO-220SIS |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Вес, г | 3.562 |
Сроки доставки
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