STH315N10F7-2
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1 шт. со склада г.Москва, срок 9-10 дней
1 900 руб.
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Описание
Электроэлемент
MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ 180 A STripFET F7 Power MOSFET in
Технические параметры
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 40 ns |
| Id - Continuous Drain Current | 180 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | H2PAK-2 |
| Packaging | Reel |
| Pd - Power Dissipation | 315 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 180 nC |
| Rds On - Drain-Source Resistance | 2.3 mOhms |
| Rise Time | 108 ns |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 148 ns |
| Typical Turn-On Delay Time | 62 ns |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 3.5 V |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 180 |
| Maximum Drain Source Resistance (mOhm) | 2.3@10V |
| Maximum Drain Source Voltage (V) | 100 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 315000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | Unknown |
| Process Technology | STripFET |
| Supplier Package | H2PAK |
| Supplier Temperature Grade | Automotive |
| Tab | Tab |
| Typical Fall Time (ns) | 40 |
| Typical Gate Charge @ 10V (nC) | 180 |
| Typical Gate Charge @ Vgs (nC) | 180@10V |
| Typical Input Capacitance @ Vds (pF) | 12800@25V |
| Typical Rise Time (ns) | 108 |
| Typical Turn-Off Delay Time (ns) | 148 |
| Typical Turn-On Delay Time (ns) | 62 |
| Вес, г | 1.61 |
Техническая документация
Datasheet
pdf, 439 КБ
Сроки доставки
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