STL20N6F7
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см. техническую документацию
см. техническую документацию
1 шт. со склада г.Москва, срок 9-10 дней
440 руб.
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Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 60В, 12А, 78Вт, PowterFLAT™ Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Factory Pack Quantity | 3000 |
| Fall Time | 7.8 ns |
| Height | 0.8 mm |
| Id - Continuous Drain Current | 20 A |
| Length | 3.3 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | PowerFLAT-3.3x3.3-HV-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 78 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 25 nC |
| Rds On - Drain-Source Resistance | 5.4 mOhms |
| Rise Time | 17.6 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 24.4 ns |
| Typical Turn-On Delay Time | 15 ns |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 3.3 mm |
| Continuous Drain Current (Id) | 100A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 5.4mΩ@10A, 10V |
| Drain Source Voltage (Vdss) | 60V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA |
| Input Capacitance (Ciss@Vds) | 1.6nF@25V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 3W;78W |
| Total Gate Charge (Qg@Vgs) | 25nC@10V |
| Type | null |
| Case | PowerFLAT |
| Drain current | 12A |
| Drain-source voltage | 60V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting | SMD |
| On-state resistance | 5.4mΩ |
| Polarisation | unipolar |
| Power dissipation | 78W |
| Type of transistor | N-MOSFET |
| Вес, г | 0.24 |
Техническая документация
STMicroelectronics STL20N6F7
pdf, 370 КБ
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