SSM6K513NU
91 шт. со склада г.Москва, срок 6-7 дней
160 руб.
Мин. кол-во для заказа 2 шт.
Добавить в корзину 2 шт.
на сумму 320 руб.
Описание
Электроэлемент
MOSFET N-CH 30V 15A 6UDFNB
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 15A(Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1130pF @ 15V |
| Manufacturer | Toshiba Semiconductor and Storage |
| Mounting Type | Surface Mount |
| Operating Temperature | 150В°C(TA) |
| Package / Case | 6-WDFN Exposed Pad |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power Dissipation (Max) | 1.25W(Ta) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 4A, 10V |
| Series | U-MOSIX-H |
| Supplier Device Package | 6-UDFNB(2x2) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 100ВµA |
Сроки доставки
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