BSS192P
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см. техническую документацию
см. техническую документацию
200 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
150 руб.
от 10 шт. —
121 руб.
от 89 шт. —
106.75 руб.
Добавить в корзину 2 шт.
на сумму 400 руб.
Описание
Электроэлемент
Транзистор полевой P-канальный 250В 0.19А 1Вт
Технические параметры
| Brand | Infineon Technologies |
| Channel Mode | Enhancement |
| Configuration | 1 P-Channel |
| Factory Pack Quantity | 1000 |
| Fall Time | 50 ns |
| Forward Transconductance - Min | 190 mS |
| Height | 1.5 mm |
| Id - Continuous Drain Current | -190 mA |
| Length | 4.5 mm |
| Manufacturer | Infineon |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-89-3 |
| Packaging | Reel |
| Part # Aliases | BSS192PH6327FTSA1 BSS192PH6327XTSA1 SP001195030 |
| Pd - Power Dissipation | 1 W |
| Product Category | MOSFET |
| Qg - Gate Charge | -6.1 nC |
| Rds On - Drain-Source Resistance | 7.7 Ohms |
| Rise Time | 5.2 ns |
| RoHS | Details |
| Series | BSS192 |
| Technology | Si |
| Transistor Polarity | P-Channel |
| Transistor Type | 1 P-Channel |
| Typical Turn-Off Delay Time | 72 ns |
| Typical Turn-On Delay Time | 4.7 ns |
| Vds - Drain-Source Breakdown Voltage | -250 V |
| Vgs - Gate-Source Voltage | +/-20 V |
| Vgs th - Gate-Source Threshold Voltage | -2 V |
| Width | 2.5 mm |
| Base Product Number | BSS192 -> |
| Current - Continuous Drain (Id) @ 25В°C | 190mA (Ta) |
| Drain to Source Voltage (Vdss) | 250V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 104pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 190mA, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | PG-SOT89 |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2V @ 130ВµA |
| Automotive | Yes |
| Channel Type | P |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Flat |
| Maximum Continuous Drain Current (A) | 0.19 |
| Maximum Drain Source Resistance (mOhm) | 12000 10V |
| Maximum Drain Source Voltage (V) | 250 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum IDSS (uA) | 0.2 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 4 |
| PPAP | Unknown |
| Process Technology | SIPMOS |
| Standard Package Name | SOT |
| Supplier Package | SOT-89 |
| Supplier Temperature Grade | Automotive |
| Tab | Tab |
| Typical Fall Time (ns) | 50 |
| Typical Gate Charge @ 10V (nC) | 4.9 |
| Typical Gate Charge @ Vgs (nC) | 4.9 10V |
| Typical Input Capacitance @ Vds (pF) | 83 25V |
| Typical Rise Time (ns) | 5.2 |
| Typical Turn-Off Delay Time (ns) | 72 |
| Typical Turn-On Delay Time (ns) | 4.7 |
| Maximum Continuous Drain Current | 190 mA |
| Maximum Drain Source Resistance | 20 Ω |
| Maximum Drain Source Voltage | 250 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1 W |
| Minimum Gate Threshold Voltage | 1V |
| Package Type | SOT-89 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 4.9 nC @ 10 V |
| Вес, г | 0.5 |
Техническая документация
Datasheet
pdf, 449 КБ
Datasheet BSS192PH6327FTSA1
pdf, 456 КБ
