BCR108
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см. техническую документацию
см. техническую документацию
110 руб.
Мин. кол-во для заказа 2 шт.
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56 руб.
от 10 шт. —
39 руб.
от 100 шт. —
22.94 руб.
Добавить в корзину 2 шт.
на сумму 220 руб.
Описание
Электроэлемент
100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR (Also Known As: BCR108)
Технические параметры
| Brand | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max | 50 V |
| Configuration | Single |
| Continuous Collector Current | 100 mA |
| DC Collector/Base Gain hfe Min | 70 |
| Emitter- Base Voltage VEBO | 50 V |
| Factory Pack Quantity | 40000 |
| Height | 1 mm |
| Length | 2.9 mm |
| Manufacturer | Infineon |
| Maximum DC Collector Current | 100 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Part # Aliases | BCR108E6433HTMA1 BCR108E6433XT SP000010737 |
| Pd - Power Dissipation | 200 mW |
| Peak DC Collector Current | 100 mA |
| Product Category | Bipolar Transistors-Pre-Biased |
| RoHS | Details |
| Series | BCR108 |
| Transistor Polarity | NPN |
| Typical Input Resistor | 2.2 kOhms |
| Typical Resistor Ratio | 0.047 |
| Unit Weight | 0.050717 oz |
| Width | 1.3 mm |
| Automotive Qualification Standard | AEC-Q101 |
| Collector Emitter Saturation Voltage Max. (Vce(sat)) | 300 mV |
| Collector-Base Voltage (Vcbo) | 50 V |
| Collector-Emitter Voltage (Vceo) | 50 V |
| Continuous Collector Current (Ic) | 100 mA |
| DC Current Gain (hFE) | 70 |
| Mounting Type | SMD |
| MSL | Level-1 |
| Operating Frequency | 170 MHz |
| Operating Temperature Max. | 150 °C |
| Operating Temperature Min. | -65 °C |
| Package Type | SOT-23 |
| Pins | 3 |
| Power Dissipation (Pd) | 200 mW |
| Вес, г | 0.1 |
Техническая документация
kd611724_e.pdf
pdf, 42 КБ
