IRLHS6276
200 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
170 руб.
от 10 шт. —
148 руб.
Добавить в корзину 2 шт.
на сумму 400 руб.
Описание
Электроэлемент
MOSFET, DUAL N CH, 20V, 3.4A, PQFN-6, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:3.4A, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.033ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800mV, , RoHS Compliant: Yes
Технические параметры
| Brand | Infineon/IR |
| Configuration | Dual |
| Factory Pack Quantity | 4000 |
| Height | 0.9 mm |
| Id - Continuous Drain Current | 4.5 A |
| Length | 2 mm |
| Manufacturer | Infineon |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | PQFN-6 |
| Packaging | MouseReel |
| Pd - Power Dissipation | 1.5 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 3.1 nC |
| Rds On - Drain-Source Resistance | 45 mOhms |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Unit Weight | 0.001517 oz |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs - Gate-Source Voltage | 12 V |
| Width | 2 mm |
| Вес, г | 0.06 |
Техническая документация
Документация
pdf, 294 КБ
