IRF2804S
890 руб.
от 2 шт. —
770 руб.
от 4 шт. —
697 руб.
Добавить в корзину 1 шт.
на сумму 890 руб.
Описание
Электроэлемент
MOSFET Transistor, Transistor Polarity:N Channel, Continuous Drain Current Id:160A, Drain Source Voltage Vds:40V, On Resistance Rds(on):1.2mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:20V, Power Dissipation Pd:330W , RoHS Compliant: Yes
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 75A(Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6450pF @ 25V |
| Manufacturer | Infineon Technologies |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-3, DВІPak(2 Leads+Tab), TO-263AB |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 300W(Tc) |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 75A, 10V |
| Series | HEXFETВ® |
| Supplier Device Package | D2PAK |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Вес, г | 1.714 |
Техническая документация
Datasheet IRF2804
pdf, 408 КБ
